This work aims to develop Advanced ultrathin cunductive layers (<10nm) by ALD (Atomic Layer Deposition)for électrodes use(resistivity <mOhm)of high density ionic capacitors fabricated on 3D complex structures (high aspect ratio 1:100).

The preliminary effort will be focused on the deep analysis and the impact of interface formation between ionic layers and subseqquent electrode layers. One challenge of this work concerns the adaptation of electrodes layers to 3D complex structures (HAR>100). The other challenge aims to reduce the ALD-based electrode layer thickness less than 5nm while still maintaining the advanced electric properties (resistivity in the mOhm range).
This work covers multiple aspects including inter alia ALD process, ALD precursors, Elementary characterization of intrinsec properties (physico-chemical, morphological and electrochemical) as well as integration on short loop 3D devices.