The global race to build a quantum computer is heating up! These cutting-edge systems operate at temperatures below 4 K to preserve the delicate quantum states essential for computation. To achieve efficient control and detection, conventional electronic circuits must perform reliably at cryogenic temperatures, in close proximity to the quantum processor, thereby reducing wiring complexity and boosting performance. Beyond quantum computing, other domains—such as space exploration, high-performance computing, or high-energy physics—also require transistors capable of operating below 100 K.
During this phD, you will perform radiofrequency (RF) electrical characterization and modeling of Silicon-Germanium Heterojunction Bipolar Transistors in cryogenic environment, contributing to a deeper understanding of their behavior and optimizing their potential for extreme-condition applications. The objectives are twofold:
1.RF Electrical Characterization and Modeling:
•Conduct RF electrical measurements of SiGe HBTs at cryogenic temperatures.
•Develop accurate models to describe their behavior in cryogenic environments.
2.Optimization of Low-Noise Amplifiers (LNAs):
•Study the low-temperature behavior of individual passive and active devices composing an LNA.
•Optimize the design of low-noise amplifiers (LNAs) for cryogenic applications.