The development of 10 nm FDSOI (Fully Depleted Silicon On Insulator) technology leads to new constraints on the architecture of transistors. The gate width (10 nm) requires a specific integration of the gate that controls the threshold voltage. The variability of the threshold voltage depends on the concentration, spatial distribution and chemical nature of dopants in the source and drain area. Therefore, it is crucial to understand the impact of growth conditions of the metallic gate, source, drain and annealing temperature to activate the dopant. To master these new constraints, the use of characterization techniques that can identify the structural and chemical mechanisms (distribution and quantification) acting in the gate, source and drain will be essential. Among all the chemical characterization techniques, Atom Probe Tomography is the technique of choice that offers a 3D chemical and quantitative mapping of a sample with nanometre scale resolution.
The objectives of this PHD will be to: (i) develop 3D characterization methodologies (distribution and chemical composition of species within the gate and source-drain area) of transistors, (ii): investigate the impact of growth conditions, annealing temperature activating the dopants and implantation dose. The PHD student will try to model the formation mechanisms of the observed chemical compounds.