General information
Organisation
The French Alternative Energies and Atomic Energy Commission (CEA) is a key player in research, development and innovation in four main areas :
• defence and security,
• nuclear energy (fission and fusion),
• technological research for industry,
• fundamental research in the physical sciences and life sciences.
Drawing on its widely acknowledged expertise, and thanks to its 16000 technicians, engineers, researchers and staff, the CEA actively participates in collaborative projects with a large number of academic and industrial partners.
The CEA is established in ten centers spread throughout France
Reference
SL-DRT-24-0767
Direction
DRT
Thesis topic details
Category
Technological challenges
Thesis topics
Development and characterization of embedded memories based on ferroelectric transistors for neuromorphic applications
Contract
Thèse
Job description
As part of CEA-LETI's Devices for Memory and Computation Laboratory (LDMC), you will be working on the development and optimization of FeFET transistors with amorphous oxide semiconductor channels for neuromorphic applications and near-memory computing.
The main challenge when co-integrating semiconductor and ferroelectric oxides is to perfectly assess and control a proper amount of oxygen vacancies, which govern both the ferroelectric properties of HfZrO2 and the conduction properties of semiconducting oxide, and impose major constraints on the manufacturing process steps.
The aim of the proposed internship is to conduct electrical measurements on various kind of elementary devices, stand-alone ferroelectric / semiconductive oxide films up to complete integreted FeFET devices. This will allow to propose an optimized process flow capable to provide both efficient ferroelectric switching performances (speed, low voltage capability…) together with state-of-the-art MOSFET performances (Ion/Ioff, subthreshold slope…).
The student will have access to a large amount of processed 200mm wafers, embedding a large variety of FeFET device flavors with different dimensions. Different process options will be available, either on already-available wafers or on request during the internship. For the latter, this will involve a close interaction with process experts (either deposition, annealing...) for modifying the FeFET process flow.
The student will benefit from state-of-the-art characterization platform, either for material characterization (XPS, UPS, XRD, TEM microscopy…) or for measuring the FeFET electrical performances.
University / doctoral school
Sciences pour l’Ingénieur : Mécanique, Physique, Micro et Nanoélectronique (SIMPMN)
Aix-Marseille Université
Thesis topic location
Site
Grenoble
Requester
Position start date
01/10/2024
Person to be contacted by the applicant
BORREL Julien julien.borrel@cea.fr
CEA
DRT/DCOS//LDMC
17 avenue des Martyrs
38054 Grenoble
+33 (0)4 38 78 27 30
Tutor / Responsible thesis director
BOCQUET Marc (IM2NP) marc.bocquet@im2np.fr
IM2NP
Equipe Mémoires (MEM)
IM2NP, Aix-Marseille Université - Campus de Polytech Marseille - 5 rue Enrico Fermi - Bât Néel - 13453 Marseille
04 13 55 40 42
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