In radiation environments like space and nuclear plants, microelectronic devices are subject to intense flux of particles degrading the devices by damaging the materials they are made of. Particles collide with atoms of the semi-conducting materials, ejecting them for their lattice site. Those displaced atoms also collide and set in motion a new generation of atoms, and so on, leading to a cascade of collisions which creates defects in the material. Moreover, primary or secondary particles (created following interaction with a neutron for example) also specifically interact with electrons of the target material, and lose kinetic energy in doing so by promoting electrons to higher energy bands. This aspect is called electronic stopping. Simulations of collision cascades must therefore describe both nuclei-nuclei collisions and electronic stopping effects.
The preferred method for collision cascades simulations at the atomic scale is Molecular Dynamics (MD). However, electronic effects are not included in this method as electrons are not taken into account explicitly. To circumvent this issue, additional modules have to be employed on top of MD to model electronic effects in a collision cascade. The state-of-the-art regarding electronic stopping simulation of a projectile in a target material is the real time - time dependent density functional theory (RT-TDDFT). The purpose of this thesis is to combine MD and RT-TDDFT to perform collision cascades simulations in GaN and study the influence of electronic effects. In addition to skills common to all thesis, the candidate will develop very specific skills in different atomic scale simulation methods, solid state physics, particle-matter interactions, linux environment and programming.