Grayscale lithography process has been used for several years to obtain complex tridimensional structures on semiconductors substrates. This process is particularly adapted for optical and opto-electronics applications.
CEA-LETI has developed a strong expertise on I-line (365nm) grayscale lithography, and is now willing to expand its capabilities and explore grayscale process with DUV (248nm and 193nm) lithography. The objective is to be able to obtain complex 3D structures with critical dimensions less than 1µm.
This PhD work will focus on acquiring a better understanding of the chemical and physical phenomena involved in grayscale photoresists, allowing the optimization of lithography processes. This work will also help with the development of etching processes and new optical models for mask designs.
You will join the lithography team of CEA-LETI, and you will exchange as well with other teams working on this topic (etching, optical simulation). You will have access to a wide range of state of the art equipments installed in LETIs cleanrooms, as well as a world class nanocharacterization platform (PFNC).