Microbolometers currently represent the dominant technology for the realization of uncooled infrared thermal detectors. These detectors are commonly used in the fields of thermography and surveillance. However, the microbolometer market is expected to grow explosively in the coming years, particularly with their integration into automobiles and the proliferation of connected devices. The CEA Leti LI2T, a recognized player in the field of infrared thermal detectors, has been transferring successive microbolometer technologies to the industrial partner Lynred for over 20 years. To remain competitive in this growing market for microbolometers, the laboratory is working on breakthrough microbolometers incorporating CMOS components as the sensitive element. In this context, the laboratory has initiated studies focusing on temperature-dependent silicon technology capabilities, with promising initial results not reported in the literature. The thesis topic fits into this context and aims to demonstrate the interest of these components for microbolometric applications. It will therefore cover the analytical modeling of these components and their associated physical effects, as well as the reading of such a component in a microbolometer imager approach. A reflection on technological integration will also be conducted. The student will benefit from several already realized technological lots to experimentally characterize the physical effects and familiarize themselves with the subject. To understand the encountered phenomena, the student will have access to the laboratory's entire test set-ups (semiconductor parameter tester, noise analyzer, optical bench, etc.) as well as the numerical analysis Tools (Matlab/Python, TCAD simulations, SPICE simulations, Comsol, etc.). By the end of the thesis, the student will be able to address the question of the interest of these components for microbolometric applications.