In order to increase the power of electronic systems, a common approach is to parallelize components within modules. However, this parallelization is complicated by the dispersion of transistor parameters, both initial and post-aging. Fast switching of Wide Bandgap (WBG) semiconductors components often requires slowdowns to avoid over-oscillation and destruction.
An intelligent driving scheme, including adjusted control, control of internal parameters of circuits and devices, as well as a feedback loop, could improve reliability, service life and reduce the risk of breakage.
The objectives of the thesis will be to develop, study and analyze the performance of control and piloting functions of power components, in silicon carbide (SiC) or gallium nitride (GaN), which could ultimately be implemented in a dedicated integrated circuit (ASIC type).
This thesis subject aims to solve critical problems in the parallelization of power components, thus contributing to eco-innovation by increasing the lifespan of power modules.