Quantum RAM (QRAM) is a key quantum computing resource featuring in many theoretical
proposals that has never been demonstrated in experiment. A QRAM is a quantum memory in which
one can read or write quantum information to a superposition of memory cells [1]. Such a device
is powerful as a tool for implementing a plethora of quantum algorithms, including Grover’s search
algorithm [2, 3], quantum chemistry [4, 5], quantum cryptography [6] and quantum machine learning
[7], and is regarded by many as essential for a future quantum computer. It has also proved difficult
to realise due to the complexity of implementing the quantum addressing of quantum storage [8, 9].
This PhD project will fit into a wider ongoing project to develop a QRAM using individual solid
state paramagnetic spin defects coupled to superconducting devices. The core aim of this project is
to investigate novel spin systems and device designs for the purposes of realising a scalable QRAM.
Novel high-gyromagnetic-ratio spin species will reach new regimes of spin-circuit coupling that were
previously inaccessible. The use of silicon as a substrate will allow future devices to reach higher
device quality factors and enable advanced device architectures by leveraging the maturity of silicon
device fabrication. High-spin nuclei such as 167Er will also be investigated, enabling experiments with
high-coherence nuclear spin qudits. These developments will expand the frontiers of a new hybrid
quantum device platform with exciting possibilities both for future quantum information processing
architectures and fundamental physics experiments