Multi-wavelength observation of astrophysical sources is the key to a global understanding of the physical processes involved. Due to instrumental constraints, the spectral band from 0.1 to 1 MeV is the one that suffers most from insufficient detection sensitivity in existing observatories. This band allows us to observe the deepest and most distant active galactic nuclei, to better understand the formation and evolution of galaxies on cosmological scales. It reveals the processes of nucleosynthesis of the heavy elements in our Universe and the origin of the cosmic rays that are omnipresent in the Universe. The intrinsic difficulty of detection in this spectral range lies in the absorption of these very energetic photons after multiple interactions in the material. This requires good detection efficiency, but also good localisation of all the interactions in order to deduce the direction and energy of the incident photon. These detection challenges are the same for other applications with a strong societal and environmental impact, such as the dismantling of nuclear facilities, air quality monitoring and radiotherapy dosimetry.

The aim of this instrumentation thesis is to develop a versatile '3D' detector that can be used in the fields of astrophysics and nuclear physics, with improved detection efficiency in the 100 keV to 1 MeV range and Compton events, as well as the possibility of locating interactions in the detector at better than pixel size.

Several groups around the world, including our own, have developed hard X-ray imaging spectrometers based on high-density pixelated semiconductors for astrophysics (CZT for NuSTAR, CdTe for Solar Orbiter and Hitomi), for synchrotron (Hexitec UK, RAL) or for industrial applications (Timepix, ADVACAM). However, their energy range remains limited to around 200 keV (except for Timepix) due to the thinness of the crystals and their intrinsic operating limitations. To extend the energy range beyond MeV, thicker crystals with good charge carrier transport properties are needed. This is currently possible with CZT, but several challenges need to be overcome.

The first challenge was the ability of manufacturers to produce thick homogeneous CZT crystals. Advances in this field over the last 20 years mean that we can now foresee detectors up to at least 10 mm thick (Redlen, Kromek).

The main remaining technical challenge is the precise estimation of the charge generated by the interaction of a photon in the semiconductor. In a pixelated detector where only the X and Y coordinates of the interaction are recorded, increasing the thickness of the crystal degrades spectral performance. Obtaining Z interaction depth information in a monolithic crystal theoretically makes it possible overcome the associated challenge. This requires the deployment of experimental methods, physical simulations, the design of readout microelectronics circuits and original data analysis methods. In addition, the ability to localise interactions in the detector to better than the size of a pixel will help to solve this challenge.