The integration of GaN (Gallium Nitride) components in power applications requires
take into account the very fast switching speed of these transistors. Furthermore, if we wish
switching currents of the order of several tens of amperes it is essential to bring them as close as possible
the power element control circuit. This rapprochement can be done in two ways: integrating
the control chip and the power chip in the same package or integrate these two elements on the
same chip.
The best option being the second, it is then necessary to carry out logic functions in GaN
making it possible to design a control circuit which will be inserted between the output signals of a
microcontroller and the GaN power transistor(s).
This development will be based on technological bricks produced at Leti using grid components.
buried MIS (Metal, Insulator, Semiconductor) and will make it possible to promote this technology by showing its
advantages (Switching speed (a few nanoseconds), operation at temperatures
(higher than 150°C)) compared to the state of the art.
Firstly, after an in-depth bibliography on the subject, it will be asked to calibrate and use
models (Spice type) of active and passive components to simulate basic logical functions and
to assist in the complete digital design of the control circuit.
A second part will consist of drawing the set of masks, followed by manufacturing the circuit on
chip integrating the control function as well as the power transistors.
In the following, it will be asked to electrically characterize the circuit in an environment close to a
real application. This step will be followed by an improvement pass in order to make it more reliable and increase the
robustness of the circuit in a wide range of temperature and frequency.