The emergence of hafnia-based ferroelectric (FE) memories has opened a new paradigm for ultra-low-power edge computing. Hafnia is fully compatible with CMOS technology and is ultra low-power—three orders of magnitude less than other emerging memory technologies.
These advantages align with strategic applications in space, defense, medical, nuclear safety, and heavy-duty transport, where electronics face harsh radiation environments.
Imprint induces a shift of the Polarization-Voltage (P-V) curve along the voltage axis and is attributed to charge trapping/detrapping, domain pinning and charged defects. All may be accentuated under irradiation.
The project will use advanced photoelectron spectroscopy techniques including synchrotron radiation induced Hard X-ray photoelectron spectroscopy and complementary structural analysis including high-resolution electron microscopy, X-ray diffraction and near field microscopy. The experimental characterization will be accompanied by theoretical calculations to simulate the material response to irradiation
The work will be carried out in the framework of close collaboration between the CEA/Leti in Grenoble providing the samples, integrated devices and wafer scale characterization and the CEA/Iramis in Saclay for the fundamental analysis of the material properties, irradiation experiments and device scale characterizations.