Chalcogenide materials, particularly Ge-Sb-Te (GST) alloys, are essential for phase-change memory (PCMs).
Although high-performance, these memories consume a great deal of energy, which
is driving the search for alternative solutions. GST alloys offer unique opportunities in the field of spin-orbitronics as spin-charge conversion materials or as sources of spin-polarized current. Two-dimensional ferromagnetic alloys such as Fe-Ge-Te or Ge-Mn-Te offer promising avenues as sources of spin current for new types of more efficient memory devices. For efficient spin injection, we are seeking a material that not only exhibits a high Curie temperature (TC) and significant spin polarization, but is also fully compatible with existing silicon-based CMOS technology.
The aim of this thesis is to develop and master, on an industrial scale on 300 mm Si substrates, the van der Waals epitaxial growth of 2D ferromagnetic films based on Fe-Ge (Ga)Te2 (n=3, 5) or Ge_(1-x)Mn_xTe, for example to integrate them in situ with spin-charge conversion chalcogenide layers such as ferroelectric layers (a-GeTe(111)) or topological insulators (Bi_(2-x)Sb2Te3).