Laser annealing processes are now used in a large range of applications in most advanced microelectronics technologies. Whether in the context of advanced planar CMOS components or 3D integration technologies, the specific characteristics of laser annealing enables to reach very high temperatures in very short times, at die scale, and to work in conditions out of thermodynamic equilibrium. This has many advantages in terms of physical effects (activation of high dopants with low diffusions, transformation of silicides, etc.), but also thermal budget (high temperatures which remain on the surface of the material). However, this kind of ultrashort optical annealing can generate pattern effect temperature variations on the chip surface between two zones with different radiative and\or thermal properties. These temperature differences may alter the electrical performances of the devices and thus have to be evaluated and overcome. A part of this work will consist, by the help of bibliography study, in finding integrative solutions (design, absorbent layer,…), in order to encounter this issue. Besides, at LETI, a wide knowledge of Nanosecond Laser Annealing (NLA) is in place for many years, and process teams are in the acquisition phase of a millisecond laser equipment (DSA). This work will represent, thanks to the numerical simulation, one of the essential building blocks for the development of the millisecond laser annealing at LETI which is mandatory for advanced technologies roadmap.

This interdisciplinary research will encompass fields such as numerical simulations, materials science, microelectronic manufacturing processes. You will benefit from the support of laboratories specializing in integration processes, as well as TCAD simulation environments.