General information
Organisation
The French Alternative Energies and Atomic Energy Commission (CEA) is a key player in research, development and innovation in four main areas :
• defence and security,
• nuclear energy (fission and fusion),
• technological research for industry,
• fundamental research in the physical sciences and life sciences.
Drawing on its widely acknowledged expertise, and thanks to its 16000 technicians, engineers, researchers and staff, the CEA actively participates in collaborative projects with a large number of academic and industrial partners.
The CEA is established in ten centers spread throughout France
Reference
SL-DRT-24-0562
Direction
DRT
Thesis topic details
Category
Technological challenges
Thesis topics
Study of InP and AsGa wafer bonding mechanisms
Contract
Thèse
Job description
Direct bonding consists of bringing sufficiently smooth and clean surfaces into contact, in order to create adhesion between them without adding any external material. This technology presents many advantages for the production of stacked structures for microelectronics and micro-technologies and has given rise to numerous innovations (manufacturing of SOI by SmartCutTM, manufacturing of SmartSiCTM, production of MEMS, wafer level packaging, 3D integration, etc.). Today, the rise of photonic technologies and the development of direct die-to-wafer bonding are paving the way for the integration of materials such as InP and GaAs in the world of silicon. In order to push these developments we wish to study the bonding mechanisms of these materials which have not yet been established in the literature.
The thesis will consist of studying the direct bonding mechanisms of InP and GaAs wafers:
A first part of the study will consist of finely characterizing the surface of these materials during pre-bonding preparations (type of bonds created, type of oxide, quantity of water adsorbed, etc.).
Then the impact of water in the establishment of adhesion will be particularly studied in relation to the mechanisms established for silicon and its oxide. The stress corrosion sensitivity of InP and GaAs surface oxides will be evaluated. Infrared spectroscopy and X-ray reflectivity studies at the synchrotron will support the conclusions.
A final axis will concern the mechanical properties of these materials to better understand their integration within heterostructures. Their ductile-brittle transition will be characterized using bonding on silicon or other substrates (silica, sapphire, etc.).
The candidate will be trained in all clean room technological tools allowing direct bonding (chemical cleaning, CMP polishing, bonding, thermal annealing) and their characterization (infrared spectroscopy, acoustic microscopy, anhydrous bonding energy measurement, X-ray reflectivity, mass spectrometry, etc.).
University / doctoral school
Ecole Doctorale de Physique de Grenoble (EdPHYS)
Université Grenoble Alpes
Thesis topic location
Site
Grenoble
Requester
Position start date
01/10/2024
Person to be contacted by the applicant
LICITRA Christophe christophe.licitra@cea.fr
CEA
DRT/DPFT/SSURF/LSCID
CEA Grenoble
17 rue des Martyrs
38054 GRENOBLE Cedex 9
04 38 78 56 41
Tutor / Responsible thesis director
FOURNEL Frank frank.fournel@cea.fr
CEA
DRT/DPFT
CEA/Grenoble
LETI/DTSI/SSURF
17 rue des Martyrs
38054 Grenoble
0438782142
En savoir plus
https://www.linkedin.com/in/christophe-licitra-bonding/